| PART |
Description |
Maker |
| AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY7C1362C-166AJXC CY7C1360C-166AJXC CY7C1360C-166A |
9-Mbit (256 K × 36/512 K × 18) Pipelined SRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AJXCT |
9-Mbit (256 K 36/512 K 18) Flow-Through SRAM
|
Cypress
|
| AM41LV3204MT10IT |
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
|
Advanced Micro Devices, Inc.
|
| CY7C1367C-166AXC |
9-Mbit (256 K × 36/512 K × 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| AM29F400BT-90FC AM29F400BT-90EIB AM29F400BT-90SE |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
|
| S29GL256N |
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
|
Cypress Semiconductor
|
| CY7C429-30PC |
256/512/1K/2K/4K x 9 Asynchronous FIFO(508.06 k) 256/512/1K/2K/4K × 9异步FIFO08.06十一
|
Cypress Semiconductor, Corp.
|
